The Hall effect sensor exploits the transverse deflection experienced by moving charge carriers in an electrical conductor or semiconductor when subjected to an orthogonal magnetic field. When a longitudinal current I flows through the thin semiconductor slab in the presence of a perpendicular magnetic flux density B, the magnetic Lorentz force F = q(v × B) deflects carriers toward one lateral edge. This charge accumulation creates an electrostatic Hall voltage V_H that linearly measures magnetic field intensity.