VLSI CMOS Inverter — Physics Simulation

How It Works

The complementary metal-oxide-semiconductor (CMOS) inverter is the fundamental building block of modern VLSI digital microprocessor logic, consisting of a pMOS pull-up transistor and an nMOS pull-down transistor fabricated upon a single silicon die. With a shared polysilicon gate input, exactly one transistor conducts at any logic state, driving the output cleanly to V_DD or ground with rail-to-rail voltage swing and zero static DC power dissipation.

Governing Equation

V_{out} = V_{DD} - V_{in} | P_{dyn} = α · C_L · V_{DD}² · f_{clk} | P_{stat} ≈ I_{leak} · V_{DD}